Liquid crystal display and a method for manufacturing the same

ABSTRACT

A liquid crystal display includes opening patterns in the electrodes or protrusions on the electrodes. The opening patterns or the protrusions have a pattern which controls the direction of the liquid crystal molecules. Thus the quality of the LCD can be improved.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to an U.S. patent application Ser. No.11/043,175 filed on Jan. 27, 2005, which relies for priority upon KoreanPatent Application No. 2004-5407 filed on Jan. 28, 2004, the contents ofwhich are herein incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display.

2. Description of Related Art

A liquid crystal display (LCD) is one of the most widely used flat paneldisplays. An LCD includes two panels provided with field-generatingelectrodes such as pixel electrodes and a common electrode and a liquidcrystal (LC) layer interposed therebetween. The LCD displays images byapplying voltages to the field-generating electrodes to generate anelectric field in the LC layer, which determines orientations of LCmolecules in the LC layer to adjust polarization of incident light.

Among the LCDs, a vertical alignment (VA) mode LCD, which aligns LCmolecules such that the long axes of the LC molecules are perpendicularto the panels in absence of electric field, is spotlighted because ofits high contrast ratio and wide reference viewing angle that is definedas a viewing angle making the contrast ratio equal to 1:10 or as a limitangle for the inversion in luminance between the grays.

The wide viewing angle of the VA mode LCD can be realized by cutouts inthe field-generating electrodes and protrusions on the field-generatingelectrodes. Since the cutouts and the protrusions can determine the tiltdirections of the LC molecules, the tilt directions can be distributedinto several directions by using the cutouts and the protrusions suchthat the reference viewing angle is widened.

However, the VA mode LCD has relatively poor lateral visibility comparedwith front visibility. For example, a patterned VA (PVA) mode LCD havingthe cutouts shows an image that becomes bright as it goes far from thefront, and in the worse case, the luminance difference between highgrays vanishes such that the images cannot be perceived.

In addition, the cutouts and the protrusions reduce the aperture ratio.In order to increase the aperture ratio, the size of the pixelelectrodes is suggested to be maximized. However, the close distancebetween the pixel electrodes causes strong lateral electric fieldsbetween the pixel electrodes, which dishevels orientations of the LCmolecules to yield textures and light leakage, thereby deterioratingdisplay characteristic.

SUMMARY OF THE INVENTION

A liquid crystal display is provided, which includes: a first panelincluding a first signal line, a second signal line intersecting thefirst signal line, a thin film transistor connected to the first and thesecond signal lines, and a pixel electrode connected to the thin filmtransistor, a second panel including a common electrode facing the pixelelectrode, and a vertically aligned liquid crystal layer that isinterposed between the pixel electrode and the common electrode andincludes first and second regions having different light transmittance.

At least one of the first and the second panels may further include atilt direction defining member having a singularity.

The first region may face the tilt direction defining member.

The tilt direction defining member may include a cutout or a protrusionformed at the pixel electrode or the common electrode, and thesingularity may include a concavity, a convexity, or a disconnection,and in particular, a concave notch provided at the cutout or theprotrusion.

The first and the second panels may further include first and secondtilt direction defining members having singularities, respectively,which may be alternately arranged.

The first region may face the first and the second tilt directiondefining members.

Each of the first and the second tilt direction defining members mayinclude a cutout formed at the pixel electrode or the common electrode,or a protrusion formed on the pixel electrode or the common electrode.

The number of singularities of each of the first and the second tiltdirection defining members may be equal to or more than one.

The transmittance of the first region may be higher than about 50% andlower than about 100% of the transmittance of the second region.

The first region may have a planar area equal to or less than a planararea of the second region and higher than about 40% of the planar areaof the second region.

Tilt directions of liquid crystal molecules in the first and the secondregions may be different.

A liquid crystal display is provided, which includes: a first panelincluding a first signal line, a second signal line intersecting thefirst signal line, a thin film transistor connected to the first and thesecond signal lines, and a pixel electrode connected to the thin filmtransistor, a second panel including a common electrode facing the pixelelectrode, and a vertically aligned liquid crystal layer that isinterposed between the pixel electrode and the common electrode andincludes first and second regions for displaying images, liquid crystalmolecules in the first and the second regions having different tiltangles.

At least one of the first and the second panels may further include atilt direction defining member having a singularity.

The first region may face the tilt direction defining member.

The tilt direction defining member may include a cutout or a protrusionformed at the pixel electrode or the common electrode, and thesingularity may include a concavity, a convexity, or a disconnectionprovided at the cutout or the protrusion.

The first region may have a light transmittance higher than about 50%and lower than about 100% of a light transmittance of the second region.

The first region may have a planar area equal to or less than a planararea of the second region and higher than about 40% of the planar areaof the second region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout view of a pixel area for an LCD according to anembodiment of the present invention.

FIG. 2 is a layout view of a common electrode panel for an LCD accordingto an embodiment of the present invention.

FIG. 3 is a layout view of an LCD including the TFT array panel shown inFIG. 1 and the common electrode panel shown in FIG. 2.

FIG. 4 is the sectional view of the LCD shown in FIG. 3 taken along theline IV-IV′.

FIG. 5 is the sectional view of the LCD shown in FIG. 3 taken along theline V-V′, respectively.

FIG. 6 is a layout view of an LCD according to another embodiment of thepresent invention.

FIG. 7 is a sectional view of the LCD shown in FIG. 6 taken along theline VII-VII′.

FIG. 8 is a sectional view of the LCD shown in FIG. 6 taken along thelines VIII-VII′ and VIU′-VIII″.

FIG. 9 is a layout view of a TFT array panel of an LCD according toanother embodiment of the present invention.

FIG. 10 is a layout view of a common electrode panel of an LCD accordingto another embodiment of the present invention.

FIG. 11 is a layout view of an LCD including the TFT array panel shownin FIG. 9 and the common electrode panel shown in FIG. 10.

FIG. 12 is a sectional view of the LCD shown in FIG. 11 taken along theline XII-XII′.

FIG. 13 is a layout view of an LCD according to another embodiment ofthe present invention.

FIG. 14 is a sectional view of the LCD shown in FIG. 13 taken along theline XIV-XIV′.

FIG. 15 is a layout view illustrating an arrangement of cutouts of apixel electrode and a common electrode of the LCD shown in FIGS. 1, 2,3, 4, and 5.

FIG. 16 is a layout view illustrating an arrangement of a cutout of acommon electrode of an LCD that has substantially the same configurationas that shown in FIGS. 1, 2, 3, 4, and 5 except for cutouts.

FIG. 17 is a table illustrating various experimental conditions of widthand distance of the cutouts shown in FIGS. 15 and 16.

FIG. 18 is a graph illustrating gamma curves for the cases illustratedin FIGS. 15, 16, and 17.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention will be described hereinafter with reference tothe accompanying drawings, in which preferred embodiments of theinvention are shown. The present invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein.

In the drawings, the thickness of layers, films and regions areexaggerated for clarity. Like numerals refer to like elementsthroughout. It will be understood that when an element such as a layer,film, region or substrate is referred to as being “on” another element,it can be directly on the other element or intervening elements may alsobe present. In contrast, when an element is referred to as being“directly on” another element, there are no intervening elementspresent.

An LCD according to an embodiment of the present invention is describedin detail with reference to FIGS. 1, 2, 3, 4, and 5.

An LCD according to an embodiment of the present invention includes aTFT array panel 100, a common electrode panel 200 facing the TFT arraypanel 100, and an LC layer 3 interposed between the TFT array panel 100and the common electrode panel 200.

The TFT array panel 100 is now described in detail with reference toFIGS. 1,3,4, and 5.

A plurality of gate lines 121 and a plurality of pairs of storageelectrode lines 131 a and 131 b are formed on an insulating substrate110.

The gate lines 121 for transmitting gate signals extend substantially ina transverse direction and are separated from each other. Each gate line121 includes a plurality of projections forming a plurality of gateelectrodes 124. The gate lines 121 may extend to be connected to adriving circuit (not shown) integrated on the substrate 110, or it mayhave an end portion (not shown) having a large area for connection withanother layer or an external driving circuit mounted on the substrate110 or on another device such as a flexible printed circuit film (notshown) that may be attached to the substrate 110.

The storage electrode lines 131 a and 131 b extend substantially in thetransverse direction, but they are bent near the gate electrodes 124.Each pair of the storage electrode lines 131 a and 131 b include aplurality of pairs of storage electrodes 133 a and 133 b that areconnected thereto and extend parallel to each other. Each storageelectrode 133 a or 133 b is once bent with a substantially right anglesuch that it includes a pair of oblique portions making an angle ofabout 45 degrees with the gate lines 121 and connected to each otherwith a substantially right angle. The storage electrode lines 131 a and131 b are supplied with a predetermined voltage such as a commonvoltage, which is applied to a common electrode 270 on the commonelectrode panel 200 of the LCD.

The gate lines 121 and the storage electrode lines 131 a and 131 b arepreferably made of Al containing metal such as Al and Al alloy, Agcontaining metal such as Ag and Ag alloy, Cu containing metal such as Cuand Cu alloy, Mo containing metal such as Mo and Mo alloy, Cr, Ta, orTi. However, they may have a multi-layered structure including two filmshaving different physical characteristics. One of the two films ispreferably made of low resistivity metal including Al containing metal,Ag containing metal, or Cu containing metal for reducing signal delay orvoltage drop in the gate lines 121 and the storage electrode lines 131 aand 131 b. The other film is preferably made of material such as Cr, Mo,Mo alloy, Ta, or Ti, which has good physical, chemical, and electricalcontact characteristics with other materials such as indium tin oxide(ITO) or indium zinc oxide (IZO). A good exemplary combination of thetwo film materials is Cr and Al—Nd alloy.

In addition, the lateral sides of the gate lines 121 and the storageelectrode lines 131 a and 131 b are inclined relative to a surface ofthe substrate 110, and the inclination angle thereof ranges about 30-80degrees.

A gate insulating layer 140 preferably made of silicon nitride (SiNx) isformed on the gate lines 121 and the storage electrode lines 131 a and131 b.

A plurality of semiconductor stripes 151 preferably made of hydrogenatedamorphous silicon (abbreviated as “a-Si”) or polysilicon are formed onthe gate insulating layer 140. Each semiconductor stripe 151 extendssubstantially parallel to the storage electrodes 133 a and 133 b suchthat it is bent periodically. Each semiconductor stripe 151 has aplurality of projections 154 branched out toward the gate electrodes 124and the width of each semiconductor stripe 151 becomes large near thegate lines 121 and the storage electrode lines 131 a and 131 b such thatthe semiconductor stripe 151 covers large areas of the gate lines 121and the storage electrode lines 131 a and 131 b.

A plurality of ohmic contact stripes and islands 161 and 165 preferablymade of silicide or n+ hydrogenated a-Si heavily doped with n typeimpurity are formed on the semiconductor stripes 151. Each ohmic contactstripe 161 has a plurality of projections 163, and the projections 163and the ohmic contact islands 165 are located in pairs on theprojections 154 of the semiconductor stripes 151.

The lateral sides of the semiconductor stripes 151 and the ohmiccontacts 161 and 165 are inclined relative to the surface of thesubstrate 110, and the inclination angles thereof are preferably in arange of about 30-80 degrees.

A plurality of data lines 171 and a plurality of drain electrodes 175separated from each other are formed on the ohmic contacts 161 and 165and the gate insulating layer 140.

The data lines 171 for transmitting data voltages extend substantiallyin the longitudinal direction and intersect the gate lines 121 and thestorage electrode lines 131 a and 131 b. Each data line 171 has an endportion 179 having a large area for contact with another layer or anexternal device and it includes a plurality of oblique portions and aplurality of longitudinal portions such that it bends periodically. Eachbent portion connects a pair of oblique portions to form a chevron andopposite ends of the pair of oblique portions are connected torespective longitudinal portions. The oblique portions of the data lines171 make an angle of about 45 degrees with the gate lines 121, and thelongitudinal portions cross over the gate electrodes 124. The length ofthe oblique portion is about one to nine times the length of thelongitudinal portion, that is, it occupies about 50-90 percents of thetotal length of the data line. An oblique portion may have three or moresub-oblique portions in a pixel area such that it is bent twice or morein a pixel area.

Each drain electrode 175 obliquely extends from a linear end portiondisposed near a gate electrode 124 to a rectangular expanded end portionhaving a large area for contact with another layer. The expansion of thedrain electrode 175 has a chamfered corner substantially parallel to thestorage electrodes 133 a and 133 b. Each longitudinal portion of thedata lines 171 includes a plurality of projections such that thelongitudinal portion including the projections forms a source electrode173 partly enclosing a linear end portion of a drain electrode 175. Eachset of a gate electrode 124, a source electrode 173, and a drainelectrode 175 along with a projection 154 of a semiconductor stripe 151form a TFT having a channel formed in the semiconductor projection 154disposed between the source electrode 173 and the drain electrode 175.

The data lines 171 and the drain electrodes 175 are preferably made ofrefractory metal such as Cr, Mo, Mo alloy, Ta and Ti. They may alsoinclude a lower film (not shown) preferably made of Mo, Mo alloy or Crand an upper film (not shown) located thereon and preferably made of Alcontaining metal.

Like the gate lines 121 and the storage electrode lines 131 a and 131 b,the data lines 171 and the drain electrodes 175 have inclined lateralsides, and the inclination angles thereof range about 30-80 degrees.

The ohmic contacts 161 and 165 are interposed only between theunderlying semiconductor stripes 151 and the overlying data lines 171and the overlying drain electrodes 175 thereon and reduce the contactresistance therebetween. The semiconductor stripes 151 include aplurality of exposed portions, which are not covered with the data lines171 and the drain electrodes 175, such as portions located between thesource electrodes 173 and the drain electrodes 175. Although thesemiconductor stripes 151 are narrower than the data lines 171 at mostplaces, the width of the semiconductor stripes 151 becomes large nearthe gate lines 121 and the storage electrode lines 131 a and 131 b asdescribed above, to smooth the profile of the surface, therebypreventing the disconnection of the data lines 171.

A passivation layer 180 is formed on the data lines 171 and the drainelectrodes 175, and exposed portions of the semiconductor stripes 151,which are not covered with the data lines 171 and the drain electrodes175. The passivation layer 180 is preferably made of low dielectricinsulating material such as a-Si:C:O and a-Si:O:F formed by plasmaenhanced chemical vapor deposition (PECVD), organic insulator orinorganic insulator such as silicon nitride and silicon oxide. Thepassivation layer 180 may have a double-layered structure including alower inorganic film and an upper organic film in order to prevent thechannel portions of the semiconductor stripes 151 from being in directcontact with organic material.

The passivation layer 180 has a plurality of contact holes 182 and 185exposing the end portions 179 of the data lines 171 and the drainelectrodes 175, respectively. The passivation layer 180 and the gateinsulating layer 140 have a plurality of contact holes 184 exposing thestorage electrode lines 131 a and 131 b. The contact holes 182, 184 and185 can have various shapes such as polygon or circle. The sidewalls ofthe contact holes 182, 184 and 185 are inclined with an angle of about30-85 degrees or have stepwise profiles.

A plurality of pixel electrodes 190, a plurality of contact assistants82, and a plurality of storage overpasses 84 are formed on thepassivation layer 180, and they are preferably made of ITO or IZO.

Each pixel electrode 190 is located substantially in an area enclosed bythe data lines 171 and the gate lines 121, and it has a pair oftransverse edges extending substantially parallel to the storageelectrode lines 131 a and 131 b and a pair of bent edges substantiallyparallel to the data lines 171 such that it also forms a chevron. Thepixel electrodes 190 overlap the storage electrode lines 131 a and 131 bincluding the storage electrodes 133 a and 133 b and the expansions ofthe drain electrodes 175.

In addition, each pixel electrode 190 has a bent cutout 191 that extendssubstantially parallel to the bent edges of the pixel electrode 190 andbisecting the pixel electrode 190 into right part 190 a and left part190 b. The cutout 191 is divided into middle portion 191 a, lowerportion 191 b, and upper portion 191 c by a pair of bridges 191 ddisposed at about quarter points of the cutout 191 from top and bottomof the cutout 191. The bridges 191 d cross the cutout 191perpendicularly to the cutout 191 and thus each of the portions 191 a,191 b, and 191 c has two oblique major edges parallel to each other andat least one minor edge perpendicular to the major edges. The width ofthe cutout 191 preferably ranges about 5-20 microns and the bridges 191d may have a shape of notch, triangle, parallelogram, or semicircle.

The pixel electrodes 190 are physically and electrically connected tothe drain electrodes 175 through the contact holes 185 such that thepixel electrodes 190 receive the data voltages from the drain electrodes175. The pixel electrodes 190 supplied with the data voltages generateelectric fields in cooperation with the common electrode 270, whichreorient liquid crystal molecules 310 disposed therebetween.

A pixel electrode 190 and the common electrode 270 form a capacitorcalled a “liquid crystal capacitor,” which stores applied voltages afterturn-off of the TFT. An additional capacitor called a “storagecapacitor,” which is connected in parallel to the liquid crystalcapacitor, is provided for enhancing the voltage storing capacity. Thestorage capacitors are implemented by overlapping the pixel electrodes190 with the storage electrode lines 131 a and 131 b including thestorage electrodes 133 a and 133 b.

The pixel electrodes 190 overlap the data lines 171 as well as the gatelines 121 to increase aperture ratio.

The contact assistants 82 are connected to the exposed end portions 179of the data lines 171 through the contact holes 182. The contactassistants 82 protect the exposed end portions 179 and complement theadhesion between the exposed end portions 179 and external devices. Thecontact assistants 82 may be omitted when the end portions 179 areomitted.

The storage overpasses 84 cross over the gate lines 121 and they areconnected to a pair of the storage electrode lines 131 through thecontact holes 184 disposed opposite each other with respect to the gatelines 121.

Finally, a homeotropic alignment layer 11 is formed on the pixelelectrodes 190, the contact assistants 82, the storage overpasses 84,and the passivation layer 180.

The description of the common electrode panel 200 follows with referenceto FIGS. 2, 3, and 4.

A light blocking member 220 called a black matrix is formed on aninsulating substrate 210 such as transparent glass and it may include aplurality of bent portions facing the bent portions of the data lines171 and a plurality of expanded portions facing the TFTs and thelongitudinal portions of the data lines 171 such that the light blockingmember 220 prevents light leakage between the pixel electrodes 190 anddefines open areas facing the pixel electrodes 190.

A plurality of color filters 230 are formed on the substrate 210 and thelight blocking member 220 and each of the color filters 230 is disposedsubstantially in the open areas defined by the light blocking member220. The color filters 230 disposed between adjacent two data lines 171and arranged in the longitudinal direction may be connected to eachother to form a stripe. Each color filter 230 may represent one of threeprimary colors such as red, green and blue colors. The color filters 230may be disposed on the TFT array panel 100, and in this case, they maybe disposed under the gate insulating layer 140 or under the passivationlayer 180.

An overcoat 250 preferably made of silicon nitride or organic materialis formed on the color filters 230 and the light blocking member 220.The overcoat 250 protects the color filters 230 and gives a flat topsurface.

A common electrode 270 preferably made of transparent conductivematerial such as ITO and IZO is formed on the overcoat 250. The commonelectrode 270 is supplied with the common voltage and it has a pluralityof pairs of chevron-like cutouts 271 and 272 facing respective pixelelectrodes 190. Each cutout 271 and 272 is divided into middle portions271 a and 272 a, lower portions 271 b and 272 b, and upper portions 271c and 272 c by a pair of bridges 271 d and 272 d disposed at aboutquarter points from the top to the bottom of the cutout 271 and 272 andthe bridges 271 d and 272 d cross the cutout 271 and 272 perpendicularto the cutout 271 and 272 such that each of the portions 271 a, 271 b,271 c, 272 a, 272 b, and 272 c has two oblique major edges parallel toeach other and at least a minor edge perpendicular to the major edges.In the meantime, the cutout 271 and 272 includes a pair of obliqueportions connected to each other and a pair of transverse portions 271 fand 272 f connected to one of the oblique portions. The oblique portionsof the cutout 271 and 272 extend substantially parallel to the cutout191 of the pixel electrode 190 and they may bisect the partitions of thepixel electrode 190 into left and right halves. The transverse portions271 f and 272 f of the cutout 271 and 272 are aligned with transverseedges of the pixel electrode 190, respectively, and they make obtuseangles with the oblique portions of the cutout 271 and 272. The cutout271 and 272 preferably has a width W in a range of about 6-20 microns.

The light blocking member 220 may also overlap the cutouts 271 and 272to 20 block the light leakage through the cutouts 271 and 272.

A homeotropic alignment layer 21 is coated on the common electrode 270.

The alignment layers 11 and 21 may be homogeneous alignment layers.

A pair of polarizer 12 and 22 is provided on outer surfaces of thepanels 100 and 200 such that their transmissive axes are crossed and oneof the transmissive axes is parallel to the gate lines 121. In addition,retardation films 13 and 23 for compensating the retardation of the LClayer 3 are disposed on the outer surfaces of the panels 100 and 200.

The LCD may further include a backlight unit for providing light for theLCD.

The LC layer 3 has negative dielectric anisotropy and the LC molecules310 in the LC layer 3 are aligned such that their long axes are verticalto the surfaces of the panels 100 and 200 in absence of electric field.

Upon application of the common voltage to the common electrode 270 and adata voltage to the pixel electrodes 190, a primary electric fieldsubstantially perpendicular to the surfaces of the panels 100 and 200 isgenerated. The LC molecules 310 tend to change their orientations inresponse to the electric field such that their long axes areperpendicular to the field direction, hi the meantime, the cutouts 191,271 and 272 of the pixel electrodes 190 and the common electrode 270 andthe edges of the pixel electrodes 190 distort the primary electric fieldto have a horizontal component which determines the tilt directions ofthe LC molecules 310. The horizontal component of the primary electricfield is perpendicular to the edges of the cutouts 191, 271 and 272 andthe edges of the pixel electrodes 190. The horizontal component of theprimary field varies depending on positions on a pixel electrode 190.

A pixel region that is defined as a portion of the LC layer 3 disposedon a pixel electrode 190 includes two different kinds of sub-regions.One kind of the sub-regions are those disposed between adjacent two of aset of the cutouts 191, 271 and 272 (referred to as primary sub-regionshereinafter) and the edges of the pixel electrodes 190 and the otherkind of the sub-regions are those disposed on the cutouts 191, 271 and272 (referred to as secondary sub-regions hereinafter).

The horizontal component of the primary electric field in the primarysub-regions is substantially perpendicular to the extension direction ofthe cutouts 191, 271 and 272 and the edges of the pixel electrodes 190.Accordingly, the primary sub-regions include eight primary domains, eachdomain including substantially the same tilt direction, and the primarydomains are partitioned by the edges of the pixel electrode 190, the setof the cutouts 191, 271 and 272 quartering the pixel electrode 190, andan imaginary transverse center line passing through the meeting point ofthe oblique portions of the cutouts 191, 271 and 272. The primarydomains have four tilt directions.

The horizontal component of the primary electric field in the secondarysub-regions is substantially parallel to the extension directions of thecutouts 191, 271 and 272 since the horizontal components generated bythe major edges of each of the cutouts 191, 271 and 272 on the secondarysub-regions point opposite directions to be cancelled. Accordingly, theliquid crystal molecules 310 on the secondary sub-regions are tiltedparallel to the extending directions of the cutouts 191, 271 and 272 toform a plurality of secondary domains.

In the meantime, the horizontal component on the secondary domains isrelatively weak compared with that on the primary domains. Accordingly,the tilt angle of the secondary domains is different from that of theprimary domains, and light transmittances in the primary and thesecondary domains are different, hi other words, the primary domainsexhibit a regular light transmittance corresponding to a given gray,while the secondary domains exhibit a light transmittance slightlydifferent from the regular transmittance. Such a mixed transmittance ofa pixel region compensates the distortion of a lateral gamma curve withrespect to a front gamma curve, thereby improving visibility of the LCD.

The transmittance of the secondary domains is preferably about 50-100%of that of the primary domains, and the area or the width of thesecondary domains is preferably about 40-100% of that of the primarydomains.

The transmittance of the secondary domains can be adjusted by varyingshapes, angles, or numbers of the bridges 191 d, 271 d and 272 d orwidth of the cutouts 191, 271 and 272. In addition, the transmittance ofthe secondary domains may be made different depending on the colorrepresented by the pixel regions.

The change of the shapes, angles, or numbers of the bridges 19 Id, 27 Idand 272 d or the width of the cutouts 191, 271 and 272 can be also madefor effective alignment of the liquid crystal molecules in the seconddomains or increasing the improvement of the visibility.

In the meantime, the direction of a secondary electric field due to thevoltage difference between the pixel electrodes 190 is perpendicular tothe edges of the pixel electrodes and the cutouts 191, 271 and 272.Accordingly, the field direction of the secondary electric fieldcoincides with that of the horizontal component of the primary electricfield in the primary domains. Consequently, the secondary electric fieldbetween the pixel electrodes 190 enhances the determination of the tiltdirections of the LC molecules 310 in the primary domains.

Since the LCD performs inversion such as dot inversion, columninversion, etc., adjacent pixel electrodes are supplied with datavoltages having opposite polarity with respect to the common voltage andthus a secondary electric field between the adjacent pixel electrodes isalmost always generated to enhance the stability of the primary domains.

Since the tilt directions of all domains make an angle of about 45degrees with the gate lines 121, which are parallel to or perpendicularto the edges of the panels 100 and 200, and the 45-degree intersectionof the tilt directions and the transmissive axes of the polarizers givesmaximum transmittance, the polarizers can be attached such that thetransmissive axes of the polarizers are parallel to or perpendicular tothe edges of the panels 100 and 200 and it reduces the production cost.

The number, shapes, and arrangements of the cutouts 191, 271 and 272 maybe modified depending on the design factors. Moreover, the cutouts 191,271 and 272 may be substituted with protrusions, preferably made oforganic material, and preferably having width ranging about 5-15microns.

An LCD according to another embodiment of the present invention will bedescribed in detail with reference to FIGS. 6, 7 and 8.

Referring to FIGS. 6-8, an LCD according to this embodiment alsoincludes a TFT array panel 100, a common electrode panel 200, and a LClayer 3 interposed therebetween.

Layered structures of the panels 100 and 200 according to thisembodiment are almost the same as those shown in FIGS. 1, 2, 3, 4, and5.

Regarding the TFT array panel 100, a plurality of gate lines 121including a plurality of gate electrodes 124 and a plurality of storageelectrode lines 131 a and 131 b including a plurality of storageelectrodes 133 a and 133 b are formed on a substrate 110, and a gateinsulating layer 140, a plurality of semiconductor stripes 151 includinga plurality of projections 154, and a plurality of ohmic contact stripes161 including a plurality of projections 163 and a plurality of ohmiccontact islands 165 are sequentially formed thereon. A plurality of datalines 171 including a plurality of source electrodes 173 and a pluralityof drain electrodes 175 are formed on the ohmic contacts 161 and 165,and a passivation layer 180 is formed thereon. A plurality of contactholes 182, 184 and 185 are provided at the passivation layer 180 and thegate insulating layer 140. A plurality of pixel electrodes 190 havingcutouts 191 divided by bridges 191 d, a plurality of storage overpasses84, and a plurality of contact assistants 82 are formed on thepassivation layer 180 and an alignment layer 11 is coated thereon.

Regarding the common electrode panel 200, a light blocking member 220, aplurality of color filters 230, an overcoat 250, a common electrode 270having cutouts 271 and 272 divided by bridges 271 d and 272 d, and analignment layer 21 are formed on an insulating substrate 210.

Different from the LCD shown in FIGS. 1, 2, 3, 4, and 5, thesemiconductor stripes 151 have almost the same planar shapes as the datalines 171 and the drain electrodes 175 as well as the underlying ohmiccontacts 161 and 165. However, the projections 154 of the semiconductorstripes 151 include some exposed portions, which are not covered withthe data lines 171 and the drain electrodes 175, such as portionslocated between the source electrodes 173 and the drain electrodes 175.

A manufacturing method of the TFT array panel according to an embodimentsimultaneously forms the data lines 171, the drain electrodes 175, thesemiconductors 151, and the ohmic contacts 161 and 165 using onephotolithography process.

A photoresist pattern for the photolithography process hasposition-dependent thickness, and in particular, it has first and secondportions with decreased thickness. The first portions are located onwire areas that will be occupied by the data lines 171 and the drainelectrodes 175 and the second portions are located on channel areas ofTFTs.

The position-dependent thickness of the photoresist is obtained byseveral techniques, for example, by providing translucent areas on theexposure mask as well as transparent areas and light blocking opaqueareas. The translucent areas may have a slit pattern, a lattice pattern,a thin film(s) with intermediate transmittance or intermediatethickness. When using a slit pattern, it is preferable that the width ofthe slits or the distance between the slits is smaller than theresolution of a light exposer used for the photolithography. Anotherexample is to use reflowable photoresist. In detail, once a photoresistpattern made of a reflowable material is formed by using a normalexposure mask only with transparent areas and opaque areas, it issubject to reflow process to flow onto areas without the photoresist,thereby forming thin portions.

As a result, the manufacturing process is simplified by omitting aphotolithography step.

Many of the above-described features of the LCD shown in FIGS. 1, 2, 3,4, and 5 may be appropriate to the LCD shown in FIGS. 6, 7 and 8.

An LCD according to another embodiment of the present invention will bedescribed in detail with reference to FIGS. 9, 10, 11, and 12.

An LCD according to this embodiment includes a TFT array panel 100, acommon electrode panel 200, and a LC layer 3 interposed between thepanels 100 and 200 and containing a plurality of LC molecules 310aligned substantially vertical to surfaces of the panels is 100 and 200.

The TFT array panel 100 is now described in detail with reference FIGS.9, 11 and 12.

A plurality of gate lines 121 and a plurality of storage electrode lines131 are formed on an insulating substrate 110 such as transparent glass.

The gate lines 121 extend substantially in a transverse direction andare separated from each other and transmit gate signals. Each gate line121 includes a plurality of projections forming a plurality of gateelectrodes 124 and an end portion 129 having a large area for contactwith another layer or an external device.

Each storage electrode line 131 extends substantially in the transversedirection and includes a plurality of pairs of two longitudinal branchesforming first and second storage electrodes 133 a and 133 b and aplurality of storage connections 133 c connected between the firststorage electrodes 133 a and the second storage electrodes 133 b inadjacent storage electrode pairs. Each of the first storage electrodes133 a has a free end portion and a fixed end portion connected to thestorage electrode line 131, and the fixed end portion has a projection.The storage electrode lines 131 are supplied with a predeterminedvoltage such as a common voltage, which is applied to a common electrode270 on the common electrode panel 200 of the LCD. Each storage electrodeline 131 may include a pair of stems extending in the transversedirection.

The gate lines 121 and the storage electrode lines 131 is preferablymade of Al containing metal, Ag containing metal, Cu containing metal,Mo containing metal, Cr, Ti or Ta.

In addition, the lateral sides of the gate lines 121 and the storageelectrode lines 131 are inclined relative to a surface of the substrate,and the inclination angle thereof ranges about 20-80 degrees.

A gate insulating layer 140 preferably made of silicon nitride (SiNx) isformed on the gate lines 121 and the storage electrode lines 131.

A plurality of semiconductor stripes 151 preferably made of hydrogenatedamorphous silicon (abbreviated to “a-Si”) or polysilicon are formed onthe gate insulating layer 140. Each semiconductor stripe 151 extendssubstantially in the longitudinal direction and has a plurality ofprojections 154 branched out toward the gate electrodes 124. The widthof each semiconductor stripe 151 becomes large near the gate lines 121and the storage connections 133 c such that the semiconductor stripe 151covers large areas of the gate lines 121 and the storage connections 133c.

A plurality of ohmic contact stripes and islands 161 and 165 preferablymade of silicide or n+hydrogenated a-Si heavily doped with n typeimpurity such as phosphorous are formed on the semiconductor stripes151. Each ohmic contact stripe 161 has a plurality of projections 163,and the projections 163 and the ohmic contact islands 165 are located inpairs on the projections 154 of the semiconductor stripes 151.

The lateral sides of the semiconductor stripes 151 and the ohmiccontacts 161 and 165 are inclined relative to a surface of thesubstrate, and the inclination angles thereof are preferably in a rangeof about 30-80 degrees.

A plurality of data lines 171, a plurality of drain electrodes 175separated from the data lines 171, and a plurality of isolated metalpieces 172 are formed on the ohmic contacts 161 and 165 and the gateinsulating layer 140.

The data lines 171 for transmitting data voltages extend substantiallyin the longitudinal direction and intersect the gate lines 121, thestorage electrode lines 131, and the storage connections 133 c. Eachdata line 171 includes an end portion 179 having a large area forcontact with another layer or an external device. A plurality ofbranches of each data line 171, which project toward the drainelectrodes 175, form a plurality of source electrodes 173. Each drainelectrode 175 includes an end portion having a large area for contactwith another layer and each source electrode 173 is curved to partlyenclose another end portion of the drain electrode 175. A gate electrode124, a source electrode 173, and a drain electrode 175 along with aprojection 154 of a semiconductor stripe 151 form a TFT having a channelformed in the projection 154 disposed between the source electrode 173and the drain electrode 175.

The metal pieces 172 are disposed on the gate lines 121 near the endportions of the storage electrodes 133 a.

The data lines 171, the drain electrodes 175, and the metal pieces 172are preferably made of refractory metal such as Cr, Mo containing metal,Ta and Ti and they may also have a multilayered structure including alower film (not shown) preferably made of Mo, Mo alloy or Cr and anupper firm (not shown) located thereon and preferably made of Al 5containing metal.

Like the gate lines 121 and the storage electrode lines 131, the datalines 171 and the drain electrodes 175 have tapered lateral sides, andthe inclination angles thereof range about 30-80 degrees.

The ohmic contacts 161 and 165 are interposed only between theunderlying semiconductor stripes 151 and the overlying data lines 171and the overlying drain electrodes 175 thereon and reduce the contactresistance therebetween. The semiconductor stripes 151 include aplurality of exposed portions, which are not covered with the data lines171 and the drain electrodes 175, such as portions located between thesource electrodes 173 and the drain electrodes 175. Although thesemiconductor stripes 151 are narrower than the data lines 171 at mostplaces, the width of the semiconductor stripes 151 becomes large nearthe gate lines 121 and the storage connections 133 c as described above,to smooth the profile of the surface, thereby preventing thedisconnection of the data lines 171.

A passivation layer 180 is formed on the data lines 171, the drainelectrodes 175, and the exposed portions of the semiconductor stripes151. The passivation layer 180 is preferably made of photosensitiveorganic material having a good flatness characteristic, low dielectricinsulating material having dielectric constant lower than 4.0 such asa-Si:C:O and a-Si:O:F formed by plasma enhanced chemical vapordeposition (PECVD), or inorganic material such as silicon nitride.

The passivation layer 180 has a plurality of contact holes 182 and 185exposing the end portions 179 of the data lines 171 and the end portionsof the drain electrodes 175, respectively. The passivation layer 180 andthe gate insulating layer 140 have a plurality of contact holes 181, 183and 184 exposing the end portions 129 of the gate lines 121, portions ofthe storage electrode lines 131 near the fixed end portions of the firststorage electrodes 133 a, and the projections of the free end portionsof the first storage electrodes 133 a, respectively. The contact holes181, 182, 183, 184, and 185 have a shape of polygon or a circle, andsidewalls of the contact holes 181, 182, 183, 184, and 185 are tapered.

A plurality of pixel electrodes 190, a plurality of contact assistants81 and 82 and a plurality of storage overpasses 84, which are preferablymade of TO or IZO, are formed on the passivation layer 180.

The pixel electrodes 190 are physically and electrically connected tothe drain electrodes 175 through the contact holes 185 such that thepixel electrodes 190 receive the data voltages from the drain electrodes175. The pixel electrodes 190 overlap the storage electrode is lines 131including the storage electrodes 133 a and 133 b to form storagecapacitors.

Each pixel electrode 190 is chamfered at its left corners and thechamfered edges of the pixel electrode 190 make an angle of about 45degrees with the gate lines 121.

Each pixel electrode 190 has a lower cutout 195, a center cutout 196,and an upper cutout 197, which partition the pixel electrode 190 into aplurality of partitions. The cutouts 195, 196 and 197 substantially haveinversion symmetry with respect to an imaginary transverse center line.

The lower cutout 195 and the upper cutout 197 are disposed at lower halfand upper half of the pixel electrode 190, respectively, which can bedivided by the imaginary center line, and the lower cutout 195 and theupper cutout 197 obliquely extend approximately from the left edge ofthe pixel electrode 190 approximately to a lower right corner and theupper right corner of the pixel electrode 190. The lower cutout 195 andthe upper cutout 197 make counterclockwise or clockwise angles of about45 degrees to the gate lines 121, and they may be connected to eachother. Each of the lower cutout 195 and the upper cutout 197 is dividedinto two portions by a bridge 195 d or 197 d. The bridges 195 d and 197d cross the cutout 195 and 197 perpendicularly to the cutout 195 and197. Thus each of the divided portions has two oblique major edgesparallel to each other and at least a minor edge perpendicular to themajor edges.

The center cutout 196 extends along the imaginary center line and has aninlet from the right edge of the pixel electrode 190, which has a pairof inclined edges substantially parallel to the lower cutout 195 and theupper cutout 197, respectively.

Accordingly, the lower half of the pixel electrode 190 is partitionedinto two lower parts by the lower cutout 195 and the upper half of thepixel electrode 190 is also partitioned into two upper parts by theupper cutout 197. The number of parts or the number of the cutoutsdepends on the design factors such as the size of pixels, the ratio ofthe transverse edges and the longitudinal edges of the pixel electrodes190, the type and characteristics of the liquid crystal layer 3, and soon.

The contact assistant 81 is connected to the end portion 129 of the gateline 121 through the contact hole 181. The contact assistant 82 isconnected to the end portion 179 of the data lines 171 through thecontact hole 182. The contact assistants 81 and 82 protect the endportions 129 and 179, and they complement the adhesion to the externaldevices.

The storage overpass 84 crosses over the gate line 121, and it isconnected to the exposed portion of the storage electrode line 131 andthe exposed projection of the first storage electrode 133 a respectivelythrough the contact holes 183 and 184 which are opposite each other withrespect to the gate line 121. The storage overpass 84 overlaps the metalpiece 172 and it may be electrically connected to the metal piece 172.The storage electrode line 131 including the storage electrodes 133 aand 133 b along with the storage overpass 84 and the metal piece 172 areused for repairing defects in the gate lines 121, the data lines 171, orthe TFTs. The electrical connection between the gate line 121 and thestorage electrode line 131 for repairing the gate line 121 is obtainedby exposing the cross points of the gate line 121 and the storageoverpass 84 by a laser beam to connect electrically the gate line 121 tothe storage overpass 84. In this case, the metal piece 172 enhances theelectrical connection between the gate line 121 and the storage overpass84.

The description of the common electrode panel 200 follows with referenceto FIGS. 10, 11, and 12.

A light blocking member 220 called a black matrix for preventing lightleakage is formed on an insulating substrate 210 such as transparentglass. The light blocking member 220 may include a plurality of openingsthat face the pixel electrodes 190 and it may have substantially thesame shape as the pixel electrodes 190. Otherwise, the light blockingmember 220 may include linear portions corresponding to the data lines171 and other portions corresponding to the TFTs.

A plurality of color filters 230 are formed on the substrate 210 andthey are disposed substantially in the areas enclosed by the lightblocking member 220. The color filters 230 may extend substantiallyalong the longitudinal direction along the pixel electrodes 190. Thecolor filters 230 may represent one of the primary colors such as red,green and blue colors.

An overcoat 250 is formed on the color filters 230.

A common electrode 270 preferably made of transparent conductivematerial such as ITO and IZO is formed on the overcoat 250.

The common electrode 270 has a plurality of sets of cutouts 275, 276,and 277.

The set of cutouts face a pixel electrode 190 and include a lower cutout275, a center cutout 276, and an upper cutout 277. Each of the cutouts275, 276, and 277 is disposed between adjacent cutouts 195, 196, and 197of the pixel electrode 190 or between a cutout 195 or 197 and achamfered edge of the pixel electrode 190. In addition, each of thecutouts 275, 276, and 277 has at least an oblique portion extendingparallel to the lower cutout 195 or the upper cutout 197 of the pixelelectrode 190. The bridges 275 d, 276 d, and 277 d divide the cutouts asshown in FIG. 10. The bridges 275 d, 276 d, and 277 d cross the cutouts275, 276, and 277 perpendicularly to the cutout 275, 276, and 277 Thuseach of the divided portions has two oblique major edges parallel toeach other and at least a minor edge perpendicular to the major edges.The cutouts 275, 276, and 277 substantially have inversion symmetry withrespect to an imaginary transverse center line.

Each of the lower and upper cutouts 275 and 277 includes an obliqueportion extending approximately from a left edge of the pixel electrode190 approximately to a lower right corner or an upper right corner ofthe pixel electrode 190. The extending direction depends on devices, andit may be the opposite direction. The ends of the oblique portion mayextend to transverse and longitudinal direction along and overlappingedges of the pixel electrode 190, and making obtuse angles with theoblique portion.

The center cutout 276 includes a central transverse portion extendingapproximately from the left edge of the pixel electrode 190 along theimaginary transverse center line, a pair of oblique portions extendingfrom an end of the central transverse portion approximately to a rightedge of the pixel electrode and making obtuse angles with the centraltransverse portion, and a pair of terminal longitudinal portionsextending from the ends of the respective oblique portions along theright edge of the pixel electrode 190, overlapping the right edge of thepixel electrode 190, and making obtuse angles with the respectiveoblique portions.

The number of the cutouts depends on the design factors. The lightblocking member 220 may overlap a portion of the cutouts 275, 276, and277 to block the light leakage through the cutouts.

Homeotropic alignment layers 11 and 21 are coated on inner surfaces ofthe panels 100 and 200, and polarizers 12 and 22 are provided on outersurfaces of the panels 100 and 200 such that their polarization axes maybe crossed and one of the transmissive axes may be parallel to the gatelines 121. One of the polarizers may be omitted when the LCD is areflective LCD.

The LCD may further include one retardation film for compensating theretardation of the LC layer 3.

The LC molecules 310 in the LC layer 3 are aligned such that their longaxes are vertical to the surfaces of the panels 100 and 200. The liquidcrystal layer 3 has negative dielectric anisotropy.

The cutouts 195, 196, 197, 275, 276, and 277 control the tilt directionsof the LC molecules in the LC layer 3. The liquid crystal moleculesdefined by adjacent cutouts and chamfered edges are tilted in adirection perpendicular to the extension direction of the cutouts andthe chamfered edges, which is called domains. It is apparent that thedomains have two long edges extending substantially parallel to eachother and making an angle of about 45 degrees with the gate line 121.

The width of the cutouts 195, 196, 197, 275, 276, and 277 is preferablyin a range between about seven microns and about twenty microns.

At least one of the cutouts 195, 196, 197, 275, 276, and 277 can besubstituted with protrusions (not shown) or depressions (not shown). Theprotrusions are preferably made 5 of organic or inorganic material anddisposed on or under the field-generating electrodes 190 or 270 and havea width smaller than the cutouts.

The shapes and the arrangements of the cutouts 195, 196, 197, 275, 276,and 277 may be modified.

An LCD according to another embodiment of the present invention will bedescribed in detail with reference to FIGS. 13 and 14.

Referring to FIGS. 13 and 14, an LCD according to this embodiment alsoincludes a TFT array panel 100, a common electrode panel 200, and a LClayer 3 interposed therebetween.

Layered structures of the panels 100 and 200 according to thisembodiment are almost the same as those shown in FIGS. 9, 10, 11, and12.

Regarding the TFT array panel 100, a plurality of gate lines 121including a plurality of gate electrodes 124 and a plurality of storageelectrode lines 131 including a plurality of storage electrodes 133 aand 133 b and storage connections 133 c are formed on a substrate 110,and a gate insulating layer 140, a plurality of semiconductor stripes151 including a plurality of projections 154, and a plurality of ohmiccontact stripes 161 including a plurality of projections 163 and aplurality of ohmic contact islands 165 are sequentially formed thereon.A plurality of data lines 171 including a plurality of source electrodes173, a plurality of drain electrodes 175, and a plurality of isolatedmetal pieces 172 are formed on the ohmic contacts 161 and 165, and apassivation layer 180 is formed thereon. A plurality of contact holes181, 182, 183, 184, and 185 are provided at the passivation layer 180and the gate insulating layer 140. A plurality of pixel electrodes 190having cutouts 195, 196, and 197 divided by bridges 195 d, 196 d, and197 d, a plurality of storage overpasses 84, and a plurality of contactassistants 81 and 82 are formed on 5 the passivation layer 180. Analignment layer 11 is coated thereon.

Regarding the common electrode panel 200, a light blocking member 220, aplurality of color filters 230, an overcoat 250, a common electrode 270having cutouts 275, 276, and 277 divided by bridges 275 d, 276 d, and277 d, and an alignment layer 21 are formed on an insulating substrate210.

Different from the LCD shown in FIGS. 9, 10, 11, and 12, thesemiconductor stripes 151 have almost the same planar shapes as the datalines 171 and the drain electrodes 175 as well as the underlying ohmiccontacts 161 and 165. However, the projections 154 of the semiconductorstripes 151 include some exposed portions, which are not covered withthe data lines 171 and the drain electrodes 175, such as portionslocated between the source electrodes 173 and the drain electrodes 175.

Many of the above-described features of the LCD shown in FIGS. 9, 10,11, and 12 may be appropriate to the LCD shown in FIGS. 13 and 14.

Now, experiments on an LCD according to an embodiment of the presentinvention will be described in detail with reference to FIGS. 15, 16,17, and 18.

As shown in FIGS. 15 and 16, a pixel electrode 190 overlaps a pair ofstorage electrodes 133 a and 133 b at its left and right edges.

Referring to FIG. 15, the pixel electrode 190 has a cutout 198 bisectingthe pixel electrode 190 into left and right parts and the pixelelectrode 190 includes a plurality of bridges 198 d crossing the cutout198. A common electrode 270 has a pair of cutouts 278 bisecting the leftand right parts of the pixel electrode 190. The common electrode 270includes a plurality of bridges 278 d crossing the cutouts 278. Thenumber of the bridges 198 d and 278 d crossing each of the cutouts 198and 278 is three.

Referring to FIG. 16, the pixel electrode 190 has no cutout. A commonelectrode 270 has a cutout 279 bisecting the pixel electrode 190 intoleft and right halves and the common electrode 270 includes one bridge279 d crossing the cutout 279.

In FIGS. 15 and 16, D1 indicates a distance between an edge of the pixelelectrode 190 and an edge of the cutouts 198, 278 and 279 adjacentthereto, D2 indicates a 10 distance between adjacent edges of adjacentcutouts 198 and 278, W1 indicates a width of the cutouts 278 and 279 ofthe common electrode 270, and W2 indicates a width of the cutout 198 ofthe pixel electrode 190.

The width of the pixel electrode 190 was 55 microns and the overlappingwidth of the pixel electrode 190 with each of the storage electrodes 133a and 133 b was 2 microns such that the non-overlapping width of thepixel electrode 190 was 51 microns.

FIG. 15 shows Cases 1, 2, and 3 in FIG. 17. FIG. 16 shows Case 4 in FIG.17. The distances D1 and D2 and the widths W1 and W2 are shown in FIG.17.

FIG. 18 shows some of the normalized luminance in front and lateralviews. FIG. 18 also shows gamma curves for a conventional LCD having acutout, but no bridge. The cutout of the conventional LCD was providedat a common electrode and had a width of 10-11 microns.

Referring to FIG. 18, the lateral gamma curve for the conventional LCDis remarkably different from the front gamma curve. However, the gammacurves in front and lateral views for Cases 2 and 4 approach each other.

As described above, the bridges enable to control the tilt of the liquidcrystal molecules on the cutouts and to realize different transmittancesin a pixel area, thereby improving visibility and luminance.

While the present invention has been described in detail with referenceto the preferred embodiments, those skilled in the art will appreciatethat various modifications and substitutions can be made thereto withoutdeparting from the spirit and scope of the present invention as setforth in the appended claims.

1. A liquid crystal display comprising: a first panel including a firstsignal line, a second signal lines intersecting the first signal line, athin film transistor connected to the first and the second signal lines,and a pixel electrode connected to the thin film transistor; a secondpanel including a common electrode facing the pixel electrode; and avertically aligned liquid crystal layer that is interposed between thepixel electrode and the common electrode; wherein at least one of thefirst and the second panels further comprise at least one tilt directiondefining member having a singularity, wherein the liquid crystal layercomprises a first region corresponding to the tilt direction definingmember and a second region disposed outside the at least one tiltdirection defining member; and wherein the first and second regionshaving different light transmittance upon application of an electricfield, wherein the ratio of the planar area of the first region and theplanar area of the second region is 0.89:1 to 0.46:1.
 2. The liquidcrystal display of claim 1, wherein the at least one tilt directiondefining member comprises a cutout or a protrusion formed at the pixelelectrode or the common electrode.
 3. The liquid crystal display ofclaim 2, wherein the pixel electrode has a cutout bisecting the pixelelectrode into left and right parts and the common electrode has a pairof cutouts bisecting the left and right parts of the pixel electrode. 4.The liquid crystal display of claim 3, wherein when D1 indicates adistance between an edge of the pixel electrode and an edge of thecutouts adjacent thereto, D2 indicates a distance between adjacent edgesof adjacent cutouts, W1 indicates a width of the cutouts of the commonelectrode, and W2 indicates a width of the cutout of the pixelelectrode, the planar area of the first region is 2*W1+W2 and the planararea of the second region is 2*D1+2*D2.
 5. The liquid crystal display ofclaim 4, wherein D1 is higher than 6.5μm and less than 17.5μm.
 6. Theliquid crystal display of claim 4, wherein D2 is higher than 7μm andless than 8.5μm.
 7. The liquid crystal display of claim 4, wherein W1 ishigher than 6μm and less than 16μm.
 8. The liquid crystal display ofclaim 4, wherein W2 is higher than 6μm and less than 8μm.